대체 부품
Price @ 1000
$ 0.674
$ 0.671
Stock
573,613
276,615
Authorized Distributors
2
3
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
Drain to Source Voltage (Vds)
60 V
60 V
Continuous Drain Current (ID)
15 A
15 A
Threshold Voltage
3 V
3 V
Rds On Max
28 mΩ
28 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.1 W
-
Input Capacitance
741 pF
741 pF
공급망
Lifecycle StatusProduction (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 1 day ago)
엔지니어링 리소스
Texas Instruments CSD88539ND의 평가 키트와 참조 설계를 확인하세요.
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설명
유통업체에서 제공한 Texas Instruments CSD88539ND에 대한 설명입니다.
60-V, N channel NexFET™ power MOSFET, dual SO-8, 28 mOhm 8-SOIC -55 to 150
Transistor MOSFET Array Dual N-CH 60V 15A 8-Pin SOIC T/R
MOSFET 2N-CH 60V 15A 8SOIC / Mosfet Array 60V 15A 2.1W Surface Mount 8-SOIC
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Power Field-Effect Transistor, 6.3A I(D), 60V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Mosfet, Dual N Channel, 60V, 15A, Soic; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.023Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD88539ND
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기술 사양
Physical
Case/PackageSOIC
Contact PlatingGold
MountSurface Mount
Number of Pins8
Weight540.001716 mg
Technical
Continuous Drain Current (ID)15 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vds)60 V
Element ConfigurationDual
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance741 pF
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingDigi-Reel®
Power Dissipation2.1 W
Rds On Max28 mΩ
Rise Time9 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time5 ns
Turn-On Delay Time6 ns
Dimensions
Height1.75 mm
Length4.9 mm
Thickness1.58 mm
Width3.91 mm