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엔지니어링 리소스
Texas Instruments CSD87502Q2의 평가 키트와 참조 설계를 확인하세요.
관련 부품
InfineonIRLML0030TRPBF
Transistor: N-MOSFET; unipolar; 30V; 5.3A; 27ohm; 1.3W; -55+150 deg.C; SMD; SOT23
VishaySI5936DU-T1-GE3
SI5936DU-T1-GE3 DUAL N-CHANNEL MOSFET TRANSISTOR,6 A,30V,8-PIN POWERPAK CHIPFET
설명
유통업체에서 제공한 Texas Instruments CSD87502Q2에 대한 설명입니다.
Transistor MOSFET Array Dual N-CH 30V 5A 6-Pin WSON T/R
30-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2, 42 mOhm, gate ESD protection 6-WSON -55 to 150
Trans MOSFET N-CH 30V 5A 6-Pin WSON EP T/R
30V 5A 2.3W 32.4mΩ@10V,4A 2 N-Channel DFN-6L-EP(2x2) MOSFETs ROHS
MOSFET 30V Dual N-Ch Common Drain NexFET
High Frequency Synchronous Power Module
제조업체 별칭
Texas Instruments에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Texas Instruments는 다음 이름으로도 알려져 있습니다:
- TI
- TEXAS
- TEXAS INST
- TEXAS INSTR
- TEXAS INSTRUMENT
- TEXAS INSTRUMENTS INC
- TEXAS INS
- TEXAS INSTRU
- TEXAS INSTRUMEN
- TI/NS
- TEX
- Texas Instruments (TI)
- TEXASIN
- TEXAS INSTRUMENTS INCORPORATED
- TEXINS
- TEXAS INTRUMENTS
- TEAXS
- TEXASI
- TEXAS INSTRUM
- TI Texas Instruments
- TEXAS USD
- TEXAS INSRUMENTS
- TEXAS INSRUMENT
- TEXAS INSTUMENTS
- TI-ROHS
- Texas Instr.
- Texas Instruments Inc.
기술 사양
Physical
MountSurface Mount
Number of Pins6
Technical
Continuous Drain Current (ID)5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance27 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)20 V
Input Capacitance353 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.3 W
Min Operating Temperature-55 °C
Number of Channels2
PackagingTape & Reel (TR)
Power Dissipation2.3 W
Rds On Max32.4 mΩ
Turn-Off Delay Time12 ns
Turn-On Delay Time3 ns
Dimensions
Height800 µm
Length2 mm
Thickness750 µm
Width2 mm