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관련 부품
STMicroelectronicsSTP90NF03L
N-Channel 30V - 0.0056Ohm - 90A - TO-220 LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
STMicroelectronicsSTP75N3LLH6
N-channel 30 V, 0.0042 Ohm, 75 A, TO-220 STripFET(TM) VI DeepGATE(TM) Power MOSFET
설명
유통업체에서 제공한 Texas Instruments CSD18504KCS에 대한 설명입니다.
40-V, N channel NexFET™ power MOSFET, single TO-220, 7 mOhm 3-TO-220 -55 to 175
Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube
Power Field-Effect Transistor, 89A I(D), 40V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
115W(Tc) 20V 2.3V@ 250µA 25nC@ 10 V 1individualNChannel 40V 7mΩ@ 40A,10V 53A，100A 1.8nF@20V TO-220-3 Through hole mounting 10.67mm*4.7mm*16.51mm
MOSFET, N-CH, 40V, 100A, 3-TO220; Polarité transistor: Canal N; Courant de drain Id: 100A; Tension Vds max..: 40V; Résistance Rds(on): 0.0055ohm; Tension, mesure Rds: 10V; Tension de seuil Vgs: 1.9V; Dissipation de puissance P
MOSFET, N-CH, 40V, 100A, 3-TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power Dissipation Pd:93W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C
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기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)85 A
Drain to Source Breakdown Voltage40 V
Drain to Source Voltage (Vds)40 V
Element ConfigurationSingle
Fall Time4.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.8 nF
Max Operating Temperature150 °C
Max Power Dissipation93 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation93 W
Rds On Max7 mΩ
Rise Time5.2 ns
Schedule B8541290080
Threshold Voltage1.9 V
Turn-Off Delay Time11.2 ns
Turn-On Delay Time4.4 ns
Dimensions
Height4.7 mm
Length10.16 mm
Thickness4.58 mm
Width8.7 mm