가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | STP90NF03L | 909 | 6 | |||||||||
| Arrow Electronics | STP90NF03L | 909 | 1 | |||||||||
| DigiKey | 497-7535-5-ND | 736 | 1 | Tube | ||||||||
| Avnet | STP90NF03L | 0 | 2K | 15h | ||||||||
| Future Electronics | STP90NF03L | 0 | 1K | Tape & Reel |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusNRND (Last Updated: 3 months ago)
관련 부품
STMicroelectronicsSTP95N3LLH6
N-channel 30 V, 4.2 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
STMicroelectronicsSTP75N3LLH6
N-channel 30 V, 0.0042 Ohm, 75 A, TO-220 STripFET(TM) VI DeepGATE(TM) Power MOSFET
설명
유통업체에서 제공한 STMicroelectronics STP90NF03L에 대한 설명입니다.
N-Channel 30V - 0.0056Ohm - 90A - TO-220 LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
Trans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 30V 90A TO-220
Single N-Channel 30 V 150 W 47 nC Silicon Through Hole Mosfet - TO-220-3
150W(Tc) 20V 2.5V@ 250¦ÌA 47nC@ 5 V 1N 30V 6.5m¦¸@ 45A,10V 90A 2.7nF@25V TO-220 9.15mm
90 A 30 V 0.0065 ohm N-CHANNEL Si POWER MOSFET TO-220AB
Power Field-Effect Transistor, 90A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)90 A
Current Rating90 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time105 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.7 nF
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Breakdown Voltage30 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation150 W
Rds On Max6.5 mΩ
Rise Time200 ns
Schedule B8541290080
Turn-Off Delay Time50 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)30 V