대체 부품
Price @ 1000
$ 0.678
$ 0.889
Stock
559,117
187,794
Authorized Distributors
4
2
Mount
Surface Mount
Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vdss)
30 V
-
Continuous Drain Current (ID)
43 A
100 A
Threshold Voltage
-
-
Rds On Max
1 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.2 W
3.2 W
Input Capacitance
9 nF
-
공급망
Lifecycle StatusProduction (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 days ago)
엔지니어링 리소스
Texas Instruments CSD17573Q5B의 평가 키트와 참조 설계를 확인하세요.
참조 설계
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설명
유통업체에서 제공한 Texas Instruments CSD17573Q5B에 대한 설명입니다.
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.45 mOhm 8-VSON-CLIP -55 to 150
Trans MOSFET N-CH 30V 100A 8-Pin VSON-CLIP EP T/R
Power Field-Effect Transistor, 43A I(D), 30V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
제조업체 별칭
Texas Instruments에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Texas Instruments는 다음 이름으로도 알려져 있습니다:
- TI
- TEXAS
- TEXAS INST
- TEXAS INSTR
- TEXAS INSTRUMENT
- TEXAS INSTRUMENTS INC
- TEXAS INS
- TEXAS INSTRU
- TEXAS INSTRUMEN
- TI/NS
- TEX
- Texas Instruments (TI)
- TEXASIN
- TEXAS INSTRUMENTS INCORPORATED
- TEXINS
- TEXAS INTRUMENTS
- TEAXS
- TEXASI
- TEXAS INSTRUM
- TI Texas Instruments
- TEXAS USD
- TEXAS INSRUMENTS
- TEXAS INSRUMENT
- TEXAS INSTUMENTS
- TI-ROHS
- Texas Instr.
- Texas Instruments Inc.
기술 사양
Physical
Contact PlatingGold
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)43 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance840 µΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.2 W
Min Operating Temperature-55 °C
Number of Channels1
PackagingTape & Reel (TR)
Power Dissipation3.2 W
Rds On Max1 mΩ
Rise Time20 ns
Schedule B8541290080
Turn-Off Delay Time40 ns
Turn-On Delay Time6 ns
Dimensions
Height0 m
Length5 mm
Thickness950 µm
Width5 mm