대체 부품
Price @ 1000
$ 0.527
$ 0.118
Stock
759,922
3,057,278
Authorized Distributors
3
3
Mount
Surface Mount
Surface Mount
Case/Package
QFN
QFN
Drain to Source Voltage (Vds)
30 V
30 V
Continuous Drain Current (ID)
1.5 A
1.5 A
Threshold Voltage
850 mV
-
Rds On Max
240 mΩ
240 mΩ
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
500 mW
500 mW
Input Capacitance
190 pF
190 pF
공급망
Lifecycle StatusProduction (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 days ago)
엔지니어링 리소스
Texas Instruments CSD17483F4T의 평가 키트와 참조 설계를 확인하세요.
참조 설계
설명
유통업체에서 제공한 Texas Instruments CSD17483F4T에 대한 설명입니다.
30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 260 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
Texas Instruments N-Channel MOSFET, Vds=30V, 1.5A, PICOSTAR Package, SMD
MOSFET, N-CHANNEL, 30V, 1.5A, LGA-3; Polarité transistor: Canal N; Courant de drain Id: 1.5A; Tension Vds max..: 30V; Résistance Rds(on): 0.185ohm; Tension, mesure Rds: 8V; Tension de seuil Vgs: 850mV; Dissipation de puissance
Mosfet, N-Channel, 30V, 1.5A, Lga-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.185Ohm; Rds(On) Test Voltage Vgs:8V; Threshold Voltage Vgs:850Mv; Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD17483F4T
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기술 사양
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)1.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationSingle
Fall Time3.4 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance190 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation500 mW
Rds On Max240 mΩ
Rise Time1.3 ns
Schedule B8541290080
Threshold Voltage850 mV
Turn-Off Delay Time10.6 ns
Turn-On Delay Time3.3 ns
Dimensions
Height350 µm
Length1.035 mm
Width635 µm