대체 부품
Price @ 1000
$ 0.344
$ 0.065
Stock
1,333,954
3,008,368
Authorized Distributors
4
4
Mount
Surface Mount
Surface Mount
Case/Package
QFN
0402
Drain to Source Voltage (Vds)
30 V
30 V
Continuous Drain Current (ID)
3.1 A
3.1 A
Threshold Voltage
850 mV
-
Rds On Max
109 mΩ
109 mΩ
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
-
500 mW
Input Capacitance
195 pF
195 pF
공급망
Lifecycle StatusProduction (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 days ago)
엔지니어링 리소스
Texas Instruments CSD17381F4T의 평가 키트와 참조 설계를 확인하세요.
평가 키트
설명
유통업체에서 제공한 Texas Instruments CSD17381F4T에 대한 설명입니다.
Texas Instruments N-Channel MOSFET FemtoFET Series, Vds=30V, 3.1A, PICOSTAR Package, SMD, 3-Pin
30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 117 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
MOSFET, N-CHANNEL, 30V, 3.1A, LGA-3; Polarité transistor: Canal N; Courant de drain Id: 3.1A; Tension Vds max..: 30V; Résistance Rds(on): 0.084ohm; Tension, mesure Rds: 8V; Tension de seuil Vgs: 850mV; Dissipation de puissance
MOSFET, N-CHANNEL, 30V, 3.1A, LGA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.084ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:850mV; Power Dissipation Pd:500mW; Transistor Case Style:LGA; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
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기술 사양
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)3.1 A
Drain to Source Breakdown Voltage30 V
Drain to Source Voltage (Vds)30 V
Element ConfigurationSingle
Fall Time3.6 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance195 pF
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
Number of Channels1
Rds On Max109 mΩ
Rise Time1.4 ns
Schedule B8541210040
Threshold Voltage850 mV
Turn-Off Delay Time10.8 ns
Turn-On Delay Time3.4 ns
Dimensions
Height350 µm
Length1.035 mm
Width635 µm