대체 부품
Price @ 1000
$ 0.512
$ 0.689
Stock
2,338,765
194,496
Authorized Distributors
4
2
Mount
Surface Mount
Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vdss)
25 V
-
Continuous Drain Current (ID)
60 A
60 A
Threshold Voltage
850 mV
-
Rds On Max
4.5 mΩ
-
Gate to Source Voltage (Vgs)
10 V
10 V
Power Dissipation
3 W
-
Input Capacitance
1.35 nF
-
공급망
Lifecycle StatusProduction (Last Updated: 6 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 6 days ago)
엔지니어링 리소스
Texas Instruments CSD16340Q3의 평가 키트와 참조 설계를 확인하세요.
관련 부품
VishaySUD42N03-3M9P-GE3
SUD42N03-3M9P-GE3 N-CHANNEL MOSFET TRANSISTOR, 107 A, 30 V, 3-PIN TO-252AA
InfineonIRLR7821TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5Milliohms;ID 65A;D-Pak (TO-252AA);PD 75W
InfineonIRLR7821PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5Milliohms;ID 65A;D-Pak (TO-252AA);PD 75W
STMicroelectronicsSTB70NF3LLT4
N-CHANNEL 30V - 0.008 OHM - 70A D2PAK LOW GATE CHARGE STripFET MOSFET
InfineonIRLR3103TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.019Ohm;ID 55A;D-Pak (TO-252AA);PD 107W
설명
유통업체에서 제공한 Texas Instruments CSD16340Q3에 대한 설명입니다.
25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 5.5 mOhm 8-VSON-CLIP -55 to 150
the nexfet power mosfet has been designed to minimize losses in power conversion and optimized for 5v gate drive applications.
MOSFET, N CH, 25V, 21A, 8SON; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 8V; Threshold Voltage Vgs: 850mV; Power Dissipation Pd: 3W; Transistor Case Style: SON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 60A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 10V
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기술 사양
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)60 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance4.3 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time5.2 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance1.35 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3 W
Min Operating Temperature-55 °C
Nominal Vgs850 mV
Number of Channels1
Number of Elements1
PackagingDigi-Reel®
Power Dissipation3 W
Rds On Max4.5 mΩ
Rise Time16.1 ns
Schedule B8541290080
Threshold Voltage850 mV
Turn-Off Delay Time13.8 ns
Turn-On Delay Time4.8 ns
Dimensions
Height1.1 mm
Length3.3 mm
Thickness1 mm
Width3.3 mm