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Texas Instruments CSD15571Q2의 평가 키트와 참조 설계를 확인하세요.
관련 부품
InfineonIRFHS8242TRPBF
25V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS
설명
유통업체에서 제공한 Texas Instruments CSD15571Q2에 대한 설명입니다.
20-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 19.2 mOhm 6-WSON -55 to 150
Trans MOSFET N-CH 20V 22A 6-Pin WSON EP T/R
Power Field-Effect Transistor, 10A I(D), 20V, 0.0192ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
2.5W(Ta) 20V 1.9V@ 250µA 6.7nC@ 10 V 1individualNChannel 20V 15mΩ@ 5A,10V 22A 419pF@10V SMD mount 2mm*2mm*850μm
제조업체 별칭
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- TI
- TEXAS
- TEXAS INST
- TEXAS INSTR
- TEXAS INSTRUMENT
- TEXAS INSTRUMENTS INC
- TEXAS INS
- TEXAS INSTRU
- TEXAS INSTRUMEN
- TI/NS
- TEX
- Texas Instruments (TI)
- TEXASIN
- TEXAS INSTRUMENTS INCORPORATED
- TEXINS
- TEXAS INTRUMENTS
- TEAXS
- TEXASI
- TI Texas Instruments
- TEXAS INSTRUM
- TEXAS USD
- TEXAS INSRUMENTS
- TEXAS INSRUMENT
- TEXAS INSTUMENTS
- TI-ROHS
- Texas Instr.
- Texas Instruments Inc.
기술 사양
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins6
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time4.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance419 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements2
PackagingTape & Reel (TR)
Power Dissipation2.5 W
Rds On Max15 mΩ
Rise Time17.2 ns
Schedule B8541290080
Turn-Off Delay Time9.9 ns
Turn-On Delay Time4.7 ns
Dimensions
Height800 µm
Length2 mm
Thickness750 µm
Width2 mm