Infineon IRFHS8242TRPBF

25V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS

Single N-Channel 25 V 21 mOhm 4.3 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm

Trans MOSFET N-CH 25V 9.9A 6-Pin PQFN EP T/R

N CH MOSFET, 25V, 9.9A, 6-PQFN; Transist; N CH MOSFET, 25V, 9.9A, 6-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:25V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; No. of Pins:6

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 8.5 / Drain-Source Voltage (Vds) V = 25 / ON Resistance (Rds(on)) mOhm = 13 / Gate-Source Voltage V = 20 / Fall Time ns = 5.3 / Rise Time ns = 19 / Turn-OFF Delay Time ns = 5.4 / Turn-ON Delay Time ns = 6.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.1