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Texas Instruments CSD13306W의 평가 키트와 참조 설계를 확인하세요.
관련 부품
VishaySIA406DJ-T1-GE3
SiA406DJ Series N-Channel 12 V 0.0198 Ohm Power Mosfet -PowerPAK SC-70-6L-Single
InfineonIRLML6401TRPBF
MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 0.05Ohm;ID -4.3A;Micro3;PD 1.3W;VGS +/-8V
설명
유통업체에서 제공한 Texas Instruments CSD13306W에 대한 설명입니다.
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm 6-DSBGA -55 to 150
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R
MOSFET N-Channel 10V 12V 3.5A 1.9W(Ta) 1.3V@250µA 11.2nC@4.5V 10.2mΩ@1.5A,4.5V 1.37nF@6V BGA SMD 1.5mm × 1mm × 620μm
Power Field-Effect Transistor, 3.5A I(D), 12V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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기술 사양
Physical
Contact PlatingCopper, Silver, Tin
MountSurface Mount
Number of Pins6
Technical
Continuous Drain Current (ID)3.5 A
Drain to Source Voltage (Vds)12 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance1.37 nF
Max Operating Temperature150 °C
Max Power Dissipation1.9 W
Min Operating Temperature-55 °C
PackagingTape & Reel (TR)
Rds On Max10.2 mΩ
Rise Time11 ns
Turn-Off Delay Time20 ns
Turn-On Delay Time7 ns
Dimensions
Height1 mm
Length1.5 mm
Thickness2 mm
Width1.8 mm