공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-11-15
Lifecycle StatusObsolete (Last Updated: 7 months ago)
관련 부품
STMicroelectronicsSTW69N65M5
N-channel 650 V, 0.037 Ohm typ., 58 A MDmesh M5 Power MOSFET in TO-247 package
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설명
유통업체에서 제공한 STMicroelectronics STW60N65M5에 대한 설명입니다.
N-channel 650 V, 0.049 Ohm, 46 A MDmesh(TM) V Power MOSFET in TO-247
Power Field-Effect Transistor, 46A I(D), 650V, 0.059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
255W(Tc) 25V 5V@ 250µA 139nC@ 10 V 1individualNChannel 650V 59mΩ@ 23A,10V 46A 6.81nF@100V TO-247-3 Through hole mounting 20.15mm(height)
MOSFET, N CH, 650V, 46A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:46A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:3;RoHS Compliant: Yes
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)46 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance59 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance6.81 nF
Max Operating Temperature150 °C
Max Power Dissipation280 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation255 W
Rds On Max59 mΩ
Resistance59 MΩ
Rise Time11 ns
Threshold Voltage4 V
Turn-Off Delay Time13 ns
Turn-On Delay Time90 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm