관련 부품
STMicroelectronicsSTW15NK90Z
N-CHANNEL 900V - 0.40͐2;6; - 15A - TO-247 Zener-Protected SuperMESH™ MOSFET
STMicroelectronicsSTW13N95K3
N-channel 950 V, 0.68 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-247
STMicroelectronicsSTW12NK90Z
N-channel 900 V, 0.72 Ohm, 11 A, TO-247 Zener-protected SuperMESH(TM) Power MOSFET
InfineonIPW90R500C3FKSA1
MOSFET N-CH 900V 11A TO247-3 / N-Channel 900 V 11A (Tc) 156W (Tc) Through Hole PG-TO247-3-1
설명
유통업체에서 제공한 STMicroelectronics STW12N120K5에 대한 설명입니다.
N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 package
Power Field-Effect Transistor, 12A I(D), 1200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
250W(Tc) 30V 5V@ 100µA 44.2nC@ 10 V 1individualNChannel 1.2KV 690mΩ@ 6A,10V 12A 1.37nF@100V TO-247-3 Through hole mounting 24.45mm(height)
제조업체 별칭
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- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage1.2 kV
Drain to Source Resistance690 mΩ
Drain to Source Voltage (Vdss)1.2 kV
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.37 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage1.2 kV
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingRail/Tube
Power Dissipation250 W
Rds On Max690 mΩ
Schedule B8541290080
Turn-Off Delay Time68.5 ns
Turn-On Delay Time23 ns
Dimensions
Height24.45 mm