가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | STW13N95K3 | 1,200 | 600 | |||||||||
| Arrow Electronics | STW13N95K3 | 1,200 | 600 | |||||||||
| TME | STW13N95K3 | 0 | 1 | 1d | ||||||||
| Future Electronics | STW13N95K3 | 0 | 600 | Tube | ||||||||
| Avnet | STW13N95K3 | 0 | 600 | 14h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-05-15
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
STMicroelectronicsSTW12NK80Z
N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in TO-247 package
STMicroelectronicsSTW12NK95Z
N-CHANNEL 950V - 0.72 Ohm - 10A - TO-247 Zener-Protected SuperMESH™ Power MOSFET
InfineonSPW11N80C3FKSA1
Power MOSFET, General Purpose, N Channel, 800 V, 11 A, 0.39 ohm, TO-247, Through Hole
InfineonIPW90R500C3FKSA1
MOSFET N-CH 900V 11A TO247-3 / N-Channel 900 V 11A (Tc) 156W (Tc) Through Hole PG-TO247-3-1
설명
유통업체에서 제공한 STMicroelectronics STW13N95K3에 대한 설명입니다.
N-channel 950 V, 0.68 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-247
STW13N95K3 N-channel MOSFET Transistor, 10 A, 950 V, 3-Pin TO-247
N-Channel 950 V 0.85 Ohm Flange Mount SuperMESH3 Power MosFet - TO-247
950 V, 10 A N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 10A I(D), 950V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N CH, 950V, 10A, TO 247; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:950V; On Resistance Rds(on):0.68ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:190W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage950 V
Drain to Source Resistance850 mΩ
Drain to Source Voltage (Vdss)950 V
Element ConfigurationSingle
Fall Time21 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.62 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage950 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation190 W
Rds On Max850 mΩ
Resistance850 mΩ
Rise Time16 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time50 ns
Turn-On Delay Time18 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm