공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 3 months ago)
관련 부품
STMicroelectronicsSTQ2NK60ZR-AP
N-channel 600 V, 7.2 Ohm, 0.4 A Zener-protected SuperMESH(TM) MOSFET in a TO-92 package
설명
유통업체에서 제공한 STMicroelectronics STQ2HNK60ZR-AP에 대한 설명입니다.
N-channel 600 V, 4.4 Ohm, 2 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package
Single N-Channel 600 V 4.8 Ohm 15 nC 3 W Silicon Through Hole Mosfet - TO-92
Power MOSFET, N Channel, 600 V, 500 mA, 4.8 ohm, TO-92, Through Hole
N-CHANNEL 600V - 4.4Ω - 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH MOSFET
Power Field-Effect Transistor, 0.5A I(D), 600V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
3W(Tc) 30V 4.5V@ 50µA 15nC@ 10 V 1individualNChannel 600V 4.8Ω@ 1A,10V 500mA 280pF@25V TO-92-3 Through hole mounting 4.95mm*3.94mm*4.95mm
MOSFET, N-CH, 600V, 0.5A, TO-92; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):4.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; P
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- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-226-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)500 mA
Drain to Source Resistance4.8 Ω
Drain to Source Voltage (Vdss)600 V
Fall Time50 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance280 pF
Max Operating Temperature150 °C
Max Power Dissipation3 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Rds On Max4.8 Ω
Rise Time30 ns
Turn-Off Delay Time13 ns
Turn-On Delay Time10 ns