공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-05-16
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2021-04-09
LTD Date2021-10-09
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
관련 부품
onsemiFQNL1N50BTA
MOSFET N-CH 500V 270MA TO92-3 / N-Channel 500 V 270mA (Tc) 1.5W (Tc) Through Hole TO-92-3
STMicroelectronicsSTQ2HNK60ZR-AP
N-channel 600 V, 4.4 Ohm, 2 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package
STMicroelectronicsSTQ2NK60ZR-AP
N-channel 600 V, 7.2 Ohm, 0.4 A Zener-protected SuperMESH(TM) MOSFET in a TO-92 package
설명
유통업체에서 제공한 onsemi FQNL2N50BTA에 대한 설명입니다.
N-Channel Power MOSFET, QFET®, 500 V, 0.35 A, 5.3 Ω, TO-92L
TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,350MA I(D),TO-92
Trans MOSFET N-CH 500V 0.35A 3-Pin TO-92L Fan-Fold
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-226-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight371.1027 mg
Technical
Continuous Drain Current (ID)350 mA
Current Rating350 mA
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance5.3 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance230 pF
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.5 W
Rds On Max5.3 Ω
Rise Time25 ns
Schedule B8541290080
Turn-Off Delay Time10 ns
Turn-On Delay Time6 ns
Voltage Rating (DC)500 V
Dimensions
Height8 mm
Length4.9 mm
Width3.9 mm