가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IPP034N03LGXKSA1 | 689 | 20h | |||||||||
| Farnell | IPP034N03LGXKSA1 | 0 | 1 | 20h | ||||||||
| Microchip USA | IPP034N03LGXKSA1 | 115 | 150 | Tube | 15h | |||||||
| Verical | IPP034N03LGXKSA1 | 490 | 344 | |||||||||
| Win Source | WS-IPP034N03LG | 7,974 | 60 | 22h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-07-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
관련 부품
STMicroelectronicsSTP90NF03L
N-Channel 30V - 0.0056Ohm - 90A - TO-220 LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
STMicroelectronicsSTP95N3LLH6
N-channel 30 V, 4.2 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
설명
유통업체에서 제공한 Infineon IPP034N03LGXKSA1에 대한 설명입니다.
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220 Tube
Power Field-Effect Transistor, 80A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 80A, 30V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Power Dissipation Pd:94W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 3.4 / Gate-Source Voltage V = 20 / Fall Time ns = 5.4 / Rise Time ns = 6.4 / Turn-OFF Delay Time ns = 35 / Turn-ON Delay Time ns = 9.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 94
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기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Drain to Source Resistance4.7 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time5.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4 nF
Max Dual Supply Voltage30 V
Max Operating Temperature175 °C
Max Power Dissipation94 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance3.4 mΩ
Package Quantity500
Power Dissipation94 W
Rds On Max3.4 mΩ
Rise Time6.4 ns
Schedule B8541290080
Turn-Off Delay Time35 ns
Turn-On Delay Time9.2 ns
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
규정 준수 정책