공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-01-29
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
STMicroelectronicsSTP6N120K3
N-channel 1200 V, 1.95 Ohm, 6 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220 package
설명
유통업체에서 제공한 STMicroelectronics STP7N95K3에 대한 설명입니다.
N-channel 950 V, 1.1 Ohm, 7.2 A, TO-220, Zener-protected SuperMESH3; Power MOSFET
STP7N95K3 N-CHANNEL MOSFET TRANSISTOR, 7.2 A, 950 V, 3-PIN TO-220
Trans MOSFET N-CH 950V 7.2A 3-Pin(3+Tab) TO-220AB Tube
N Ch Power Mosfet, Supermesh3, 950V, 7.2A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:950V; Continuous Drain Current Id:7.2A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Power Dissipation:150W; Msl:- Rohs Compliant: Yes |Stmicroelectronics STP7N95K3
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)7.2 A
Drain to Source Breakdown Voltage950 V
Drain to Source Resistance1.35 Ω
Drain to Source Voltage (Vdss)950 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.031 nF
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage950 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation150 W
Rds On Max1.35 Ω
Resistance1.35 Ω
Rise Time9 ns
Threshold Voltage4 V
Turn-Off Delay Time36 ns
Turn-On Delay Time14 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm