공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 3 months ago)
관련 부품
STMicroelectronicsSTP10NK80Z
N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-220 package
STMicroelectronicsSTP8NK100Z
MOSFET N-CH 1000V 6.5A TO-220 / Trans MOSFET N-CH 1KV 6.5A 3-Pin(3+Tab) TO-220AB Tube
설명
유통업체에서 제공한 STMicroelectronics STP9NK90Z에 대한 설명입니다.
N-CHANNEL 900V - 1.1 OHM - 8A TO-220 ZENER PROTECTED SUPERMESH MOSFET
STP9NK90Z N-CHANNEL MOSFET TRANSISTOR, 8 A, 900 V, 3-PIN TO-220
Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220AB Tube
N-CHANNEL 900V-1.1OHM-8A-TO-220 ZENER-PROTECTED SUPERMESHTM MOSFET Power Field-Effect Transistor, 8A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 900V, 8A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STP9NK90Z
The SuperMESH(TM) series is obtained through an extreme optimization of ST's well established strip-based PowerMESH(TM) layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)8 A
Current Rating8 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance1.3 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time28 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.115 nF
Max Operating Temperature150 °C
Max Power Dissipation160 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation160 W
Rds On Max1.3 Ω
Resistance1.3 Ω
Rise Time13 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time55 ns
Turn-On Delay Time22 ns
Voltage Rating (DC)900 V
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm