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설명
유통업체에서 제공한 STMicroelectronics STP28N65M2에 대한 설명입니다.
N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220 package
In a Pack of 5, N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220 STMicroelectronics STP28N65M2
Trans MOSFET N-CH 650V 20A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 20A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
170W(Tc) 25V 4V@ 250µA 35nC@ 10 V 1individualNChannel 650V 180mΩ@ 10A,10V 20A 1.44nF@100V TO-220 Through hole mounting 4.6mm(width)
MOSFET, N-CH, 650V, 20A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
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- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.44 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation170 W
Min Breakdown Voltage650 V
Number of Channels1
Number of Elements1
Power Dissipation170 W
Rds On Max180 mΩ
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time59 ns
Turn-On Delay Time13.4 ns
Dimensions
Height19.68 mm
Length10.4 mm
Width4.6 mm