공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
VishaySIHF18N50D-E3
MOSFET, N-CH, 500V, 18A, TO-220FP; Transistor Polarity:N Channel; Continuous Dra
STMicroelectronicsSTF22NM60N
N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-220FP
STMicroelectronicsSTF21NM60ND
N-Channel 600 V 220 mOhm Flange Mount FDmesh II Power Mosfet - TO-220FP
설명
유통업체에서 제공한 STMicroelectronics STP20NM60FP에 대한 설명입니다.
N-Channel 600V - 0.25Ohm - 20A TO-220FP MDmesh™ POWER MOSFET
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 600V 20A TO220FP
Power Field-Effect Transistor, 20A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.25ohm; Rds(on) Test Voltage Vgs: 30V; Threshold Voltage Vgs: 4V; Power Dissipation
Mosfet, N Channel, 600V, 20A, To-220Fp-3; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:20A; Tensión Drenaje-Fuente Vds:600V; Resistencia De Activación Rds(On):250Mohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STP20NM60FP
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)20 A
Current Rating20 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance290 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.5 nF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage600 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation45 W
Rds On Max290 mΩ
Resistance290 mΩ
Rise Time20 ns
Threshold Voltage4 V
Turn-Off Delay Time42 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)650 V
Dimensions
Height9.3 mm
Length10.4 mm
Width4.6 mm