공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTP13NK60ZFP
N-Channel 600 V, 0.48 Ohm, 13 A TO-220FP Zener-Protected SuperMesh(TM) POWER MOSFET
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STMicroelectronicsSTF10N62K3
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설명
유통업체에서 제공한 STMicroelectronics STP10NK60ZFP에 대한 설명입니다.
Transistor: N-MOSFET; unipolar; 600V; 10A; 0.75ohm; 35W; -55+150 deg.C; THT; TO220FP
N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in TO-220FP package
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 600V 10A TO220FP
STP10NK60ZFP N-CHANNEL MOSFET TRANSISTOR, 10 A, 600 V, 3-PIN TO-220FP
Power MOSFET, N Channel, 600 V, 10 A, 0.75 ohm, TO-220FP, Through Hole
N-CHANNEL 600V-0.65 OHM-10A-TO-220FP ZENER-PROTECTED SUPERMESH POWER MOSFET Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.65ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipat
N Channel Mosfet, 600V, 10A, To-220Fp; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:10A; Tensión Drenaje-Fuente Vds:600V; Resistencia De Activación Rds(On):0.65Ohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STP10NK60ZFP
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)10 A
Current Rating10 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance750 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.37 nF
Max Operating Temperature150 °C
Max Power Dissipation35 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation35 W
Rds On Max750 mΩ
Resistance750 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time55 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)600 V
Dimensions
Height9.3 mm
Length10.4 mm
Width4.6 mm