가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | STL50DN6F7 | 54,000 | 3K | |||||||||
| Arrow Electronics | STL50DN6F7 | 54,000 | 3K | |||||||||
| DigiKey | 497-16488-1-ND | 2,950 | 1 | Cut Tape | ||||||||
| TME | STL50DN6F7 | 2,886 | 1 | 4h | ||||||||
| Avnet | STL50DN6F7 | 0 | 3K | 14h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-11-13
Lifecycle StatusProduction (Last Updated: 5 months ago)
관련 부품
Diodes Inc.DMTH6009LK3Q-13
Mosfet, N-Ch, 60V, 59A, To-252 Rohs Compliant: Yes |Diodes Inc. DMTH6009LK3Q-13
설명
유통업체에서 제공한 STMicroelectronics STL50DN6F7에 대한 설명입니다.
Dual N-channel 60 V, 9 mOhm typ., 57 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island package
Transistor MOSFET Array Dual N-CH 60V 57A 2-Pin PowerFLAT T/R
Trans MOSFET N-CH 60V 57A 8-Pin Power Flat EP T/R
62.5W 20V 4V@ 250¦ÌA 17nC@ 10V 2N 60V 11m¦¸@ 7.5A,10V 57A 1.035nF@30V 1mm
Lv Mosfet Trench |Stmicroelectronics STL50DN6F7
Power MOSFETs, 60V, 57A, PowerFLAT 5x6 double island, Tape and Reel
STMicroelectronics SCT
Tantalum Capacitors - Solid SMD 68uF 20volts 20% E case Molded
Power Field-Effect Transistor, 57A I(D), 60V, 0.011ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Dual N-CH 60V 57A 11mOhm PF5x6
MOSFET 2N-CH 60V 57A POWERFLAT
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals6
Technical
Continuous Drain Current (ID)57 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance11 mΩ
Drain to Source Voltage (Vdss)60 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.035 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation62.5 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingTape and Reel
Power Dissipation62.5 W
Rds On Max11 mΩ
Schedule B8541290080
Turn-Off Delay Time19.4 ns
Turn-On Delay Time14.5 ns
Dimensions
Height1 mm