공급망
Country of OriginAustria, Germany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-11-12
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
onsemiNTTFS5C673NLTAG
Single N-Channel Power MOSFET 60V, 50A, 9.3mΩ Power MOSFET 60V, 50A, 9.3 mOhm, Single N-Channel, u8FL, Logic Level
InfineonIPD088N06N3GBTMA1
Power MOSFET, N Channel, 60 V, 50 A, 0.0071 ohm, TO-252 (DPAK), Surface Mount
InfineonAUIRFR3806
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
InfineonIRLZ44NSTRLPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.022Ohm;ID 47A;D2Pak;PD 110W;VGS +/-16V;-55
설명
유통업체에서 제공한 Infineon BSC097N06NSATMA1에 대한 설명입니다.
Trans MOSFET N-CH 60V 46A Automotive 8-Pin TDSON T/R
2.5KW 20V 3.3V 12nC@ 10V 1N 60V 9.7m¦¸@ 10V 46A 860pF@ 30V 5000,TDSON-8 , 1.1mm
Power Field-Effect Transistor, 12A I(D), 60V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
Mosfet, N-Ch, 60V, 46A, Pg-Tdson-8; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:46A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon Technologies BSC097N06NSATMA1
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)12 A
Drain to Source Resistance9.7 mΩ
Drain to Source Voltage (Vdss)60 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance860 pF
Max Dual Supply Voltage60 V
Max Operating Temperature150 °C
Max Power Dissipation36 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance9.7 mΩ
Package Quantity5000
PackagingTape & Reel
Power Dissipation36 W
Rds On Max9.7 mΩ
Rise Time2 ns
Schedule B8541290080
Threshold Voltage2.8 V
규정 준수
환경 분류
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
규정 준수 정책