관련 부품
VishaySI7149DP-T1-GE3
VISHAY - SI7149DP-T1-GE3 - MOSFET-Transistor, p-Kanal, -50 A, -30 V, 0.0042 ohm, -10 V, -1.2 V
VishaySI7634BDP-T1-GE3
SI7634BDP Series N-Channel 30 V 0.0054 Ohm Power MosFet SMT - POWERPAK-SO-8
설명
유통업체에서 제공한 STMicroelectronics STK820에 대한 설명입니다.
Power MOSFET Transistors 25V 0.005 21A N-Channel
Trans MOSFET N-CH 25V 21A 10-Pin PolarPAK T/R
N-channel 24V - 0.005Ohm - 21A - PolarPAK®
21 A 25 V 0.008 ohm N-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 21A I(D), 25V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
MountSurface Mount
Number of Pins10
Number of Terminals4
Technical
Continuous Drain Current (ID)21 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vds)25 V
Fall Time4 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.425 nF
Max Operating Temperature150 °C
Max Power Dissipation5.2 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation5.2 W
Rds On Max7.3 mΩ
Rise Time23 ns
Turn-Off Delay Time17 ns