공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-10-05
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2020-11-13
LTD Date2021-05-13
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
설명
유통업체에서 제공한 onsemi FDMS3602S에 대한 설명입니다.
Asymmetric Dual N-Channel MOSFET PowerTrench® Power Stage, 25V
Trans MOSFET N-CH Si 25V 15A/26A 8-Pin Power 56 T/R
DUAL N CH MOSFET, 25V, 40A, POWER56 - More Details
Power Field-Effect Transistor, 15A I(D), 25V, 0.0056ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
XSTR NPN MOSFET 25 V 15A(20A) ++++ ++++
DUAL N-CHANNEL POWER TRENCH MOSFET
POWER FIELD-EFFECT TRANSISTOR, 1
MOSFET, NN CH, ASYMMETRIC, 25V, POWER56; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0044ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
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- ONS
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- ON Semicondu
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- ONSE
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- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
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- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
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- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals6
Weight90 mg
Technical
Continuous Drain Current (ID)15 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance5.6 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time3.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.68 nF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements2
Power Dissipation2.5 W
Rds On Max5.6 mΩ
Resistance5.6 MΩ
Rise Time4.2 ns
Turn-Off Delay Time31 ns
Dimensions
Height1.05 mm
Length5 mm
Width6 mm