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설명
유통업체에서 제공한 STMicroelectronics STH310N10F7-2에 대한 설명입니다.
N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package
STH310N10F7-2 N-CHANNEL MOSFET TRANSISTOR, 180 A, 100 V, 3-PIN H2PAK
STMicroelectronics N-Ch MOSFET STripFET H7 Series Vds=100V 180A H2PAK-2 SMD 3-Pin
MOSFET, N-CH, 100V, 180A, H2PAK-2; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-263-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance2.5 mΩ
Drain to Source Voltage (Vds)100 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance12.8 nF
Max Operating Temperature175 °C
Max Power Dissipation315 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation315 W
Rds On Max2.3 mΩ
Resistance2.3 mΩ
Rise Time108 ns
Schedule B8541290080
Turn-Off Delay Time148 ns
Turn-On Delay Time62 ns
Dimensions
Height4.8 mm
Length15.8 mm
Width10.4 mm