가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | STH180N10F3-6 | 0 | 1K | 1d | ||||||||
| Farnell | STH180N10F3-6 | 0 | 1 | 23h | ||||||||
| Win Source | WS-STH180N10F3-6 | 7,300 | 13 | 1d | ||||||||
| Worldway Electronics | STH180N10F3-6 | 7,570 | 7 | Tape & Reel | 23h | |||||||
| Aztech | STH180N10F3-6 | 5,406 | 18h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-11-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2015-01-31
LTD Date2015-07-31
관련 부품
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100V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
STMicroelectronicsSTH240N75F3-6
N-channel 75 V, 2.6 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-6 package
STMicroelectronicsSTH315N10F7-6
Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET
STMicroelectronicsSTH310N10F7-6
N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package
설명
유통업체에서 제공한 STMicroelectronics STH180N10F3-6에 대한 설명입니다.
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
N-channel 100 V, 3.9 mOhm, 180 A, H2PAK-6 STripFET(TM) III Power MOSFET
Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) H2PAK T/R
MOSFET N-Channel 100V 180A H2PAK-7
N-CH 100V 180A 3,9mOhm H2Pak-6 RoHSconf
MOSFET, N CH, 100V, 180A, H2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:315W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:H2PAK-6; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-263-7
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)180 A
Drain to Source Breakdown Voltage100 V
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time6.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.665 nF
Max Operating Temperature175 °C
Max Power Dissipation315 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation315 W
Rds On Max4.5 mΩ
Resistance4.5 MΩ
Rise Time97.1 ns
Threshold Voltage2 V
Turn-Off Delay Time99.9 ns
Turn-On Delay Time25.6 ns
Dimensions
Height4.8 mm
Length15.25 mm
Width10.4 mm