가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | STGY80H65DFB | 600 | 3 | Tube | ||||||||
| DigiKey | 497-14564-5-ND | 362 | 1 | Tube | ||||||||
| Avnet | STGY80H65DFB | 0 | 600 | 7h | ||||||||
| Mouser | 511-STGY80H65DFB | 28 | 1 | Tube | ||||||||
| Microchip USA | STGY80H65DFB | 348 | 150 | Tray | 21h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-11-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
onsemiFGH75T65UPD-F085
Trans IGBT Chip N-CH 650V 150A 375000mW Automotive 3-Pin(3+Tab) TO-247 Tube
MicrochipAPT45GR65B
Igbt Mos 8 650 V 45 A To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT45GR65B
LittelfuseIXXH40N65B4
Trench Series - 650V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs, TO-247, RoHS
설명
유통업체에서 제공한 STMicroelectronics STGY80H65DFB에 대한 설명입니다.
Trans IGBT Chip N-CH 650V 120A 469000mW 3-Pin(3+Tab) Max247 Tube
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
Insulated Gate Bipolar Transistor, 120A I(C), 650V V(BR)CES, N-Channel
IGBT TRENCH FS 650V 120A MAX247
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)650 V
Element ConfigurationSingle
Max Collector Current120 A
Max Operating Temperature175 °C
Max Power Dissipation469 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time85 ns