공급망
Country of OriginSouth Korea
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-02-17
Lifecycle StatusProduction (Last Updated: 7 months ago)
관련 부품
STMicroelectronicsSTGFW30V60DF
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
InfineonIRG4BC40SPBF
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package, TO220-3, RoHS
설명
유통업체에서 제공한 STMicroelectronics STGWT30H60DFB에 대한 설명입니다.
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
Transistor, Igbt, 600V, 60A, To-3P; |Stmicroelectronics STGWT30H60DFB
260W 60A 600V FS(Field Stop) TO-3P-3 IGBT Transistors / Modules ROHS
Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(3+Tab) TO-3P Tube
STMicroelectronics IGBT, maximum 600 V, maximum 60 A
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
IGBT, 60 A, 1.55 V, 260 W, 600 V, TO-3P, 3 Pins
IGBT 600V 30A Trench Field-Stop TO-3P
RS APAC
IGBT Transistors PTD IGBT & IPM
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.756003 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Max Collector Current60 A
Max Operating Temperature175 °C
Max Power Dissipation260 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time53 ns
Dimensions
Height14.1 mm
Length15.8 mm
Width5 mm