공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-08-07
Lifecycle StatusProduction (Last Updated: 8 months ago)
관련 부품
onsemiSGS10N60RUFDTU
Trans IGBT Chip N-CH 600V 16A 55000mW 3-Pin(3+Tab) TO-220FP Tube / IGBT 600V 16A 55W TO220F
설명
유통업체에서 제공한 STMicroelectronics STGP30H60DFB에 대한 설명입니다.
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(3+Tab) TO-220AB Tube
IGBT, SINGLE, 600V, 60A, TO-220; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Technical
Collector Base Breakdown Voltage (VCES)600 V
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.55 V
Collector Emitter Voltage (VCEO)600 V
Forward Current30 A
Forward Voltage2 V
Max Collector Current60 A
Max Power Dissipation260 W
Number of Elements1
Reverse Recovery Time53 ns
Schedule B8541290080