관련 부품
STMicroelectronicsSTGP6NC60HD
STMICROELECTRONICS STGP6NC60HD IGBT Single Transistor, 15 A, 2.5 V, 56 W, 600 V, TO-220, 3 Pins
STMicroelectronicsSTGP10NC60HD
STGP10NC60HD Series N-Channel 600 V 10 A Very Fast IGBT Flange Mount - TO-220
STMicroelectronicsSTGP10NC60KD
Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 20A 65W TO220
InfineonIKA15N60TXKSA1
600 V IGBT with anti-parallel diode in TO-220 Full-Pak package, PG-TO220-3, RoHS
설명
유통업체에서 제공한 STMicroelectronics STGPL6NC60DI에 대한 설명입니다.
Trans IGBT Chip N-CH 600V 14A 56000mW 3-Pin(3+Tab) TO-220 Tube
STG Series Powermesh Low Turn Off Energy Through Hole IGBT - TO-220-2
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB
6 A, 600 V hyper fast IGBT with Ultrafast diode
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Collector Base Breakdown Voltage (VCES)600 V
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.9 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Forward Current10 A
Forward Voltage1.8 V
Max Collector Current14 A
Max Operating Temperature150 °C
Max Power Dissipation56 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation56 W
Reverse Recovery Time23 ns