Infineon IKA15N60TXKSA1

600 V IGBT with anti-parallel diode in TO-220 Full-Pak package, PG-TO220-3, RoHS

Trans IGBT Chip N-CH 600V 14.7A 3-Pin(3+Tab) TO-220

Insulated Gate Bipolar Transistor, 14.7A I(C), 600V V(BR)CES, N-Channel, TO-220AB

IGBT, SINGLE, 600V, 18.3A, TO-220; DC Collector Current:18.3A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:35.7W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of

IGBT, N, 600V, 15A, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:15A; Voltage, Vce Sat Max:2.05V; Power Dissipation:35.7W; Case Style:TO-220; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Transistors, No. of:1

Hard-switching 600 V, 15 A TRENCHSTOP™ IGBT3 Discrete copacked with full-rated external free-wheeling diode in a TO-220 Full-Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to the combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.