onsemi HGTP12N60A4

600V, SMPS Series N-Channel IGBTs | IGBT 600V 54A 167W TO220AB
$ 0.702
Production

가격 및 재고

데이터시트 및 문서

onsemi HGTP12N60A4에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

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Farnell

재고 내역

3개월간의 트렌드:
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공급망

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-05-01
Lifecycle StatusProduction (Last Updated: 2 months ago)

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설명

유통업체에서 제공한 onsemi HGTP12N60A4에 대한 설명입니다.

600V, SMPS Series N-Channel IGBTs | IGBT 600V 54A 167W TO220AB
Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:54A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:167W; Package/Case:3-TO-220AB ;RoHS Compliant: Yes
IGBT, N, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:54A; Voltage, Vce Sat Max:2.7V; Power Dissipation:167W; Case Style:TO-220AB; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:96A; No. of Pins:3; Pin Format:GCE; Power, Pd:167W; Power, Ptot:167W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:18ns; Time, Rise:8ns; Transistors, No. of:1

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