가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | STGD5NB120SZT4 | 5,000 | 2500 | |||||||||
| TME | STGD5NB120SZT4 | 2,433 | 1 | 1d | ||||||||
| Future Electronics | STGD5NB120SZT4 | 0 | 2500 | Tape & Reel | ||||||||
| Avnet | STGD5NB120SZT4 | 0 | 2500 | 15h | ||||||||
| RS (Formerly Allied Electronics) | STGD5NB120SZT4 | 0 | 5 | Bulk | 2h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
onsemiISL9V2040D3ST
Trans IGBT Chip N-CH 390V 10A 130W 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
onsemiNGTB03N60R2DT4G
ON SEMICONDUCTOR NGTB03N60R2DT4G IGBT Single Transistor, 9 A, 1.7 V, 49 W, 600 V, TO-252, 3 Pins
STMicroelectronicsSTGD10NC60KDT4
Igbt Single Transistor, 20 A, 2 V, 60 W, 600 V, To-252, 3 |Stmicroelectronics STGD10NC60KDT4
STMicroelectronicsSTGD3HF60HDT4
STGD3HF60HD Series 600 V 4.5 A, Very Fast IGBT with Ultrafast Diode - TO-252
설명
유통업체에서 제공한 STMicroelectronics STGD5NB120SZT4에 대한 설명입니다.
STGD5NB120SZ Series 1200 V 10 A Low Drop Internally Clamped IGBT - TO-252-3
Insulated Gate Bipolar Transistor, 10A I(C), 1200V V(BR)CES, N-Channel, TO-252AA
IGBTs Insulated Gate Bipolar Transistor N-Ch 1200 Volt 5 Amp
Trans IGBT Chip N-CH 1200V 10A 75W 3-Pin(2+Tab) DPAK T/R
STGD5NB120SZT4, IGBT TRANSISTOR, 10 A 1200 V, 3-PIN DPAK
Trench gate field-stop IGBT, DPAK, Tape and Reel
STMicroelectronics SCT
IGBT 5A 1200V Internally Clamped DPAK
IGBT, 1.3V, 10A, TO-252-3; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.2kV; Power Dissipation Pd: 75W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Transistor Type: IGBT
IC RS232 3V5.5V 15KVESD 16-SSOP
Ptd High Voltage Rohs Compliant: Yes
STMICROELECTRONICS STGD5NB120SZT4 IGBTS
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Collector Base Breakdown Voltage (VCES)1.2 kV
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current5 A
Current Rating5 A
Element ConfigurationSingle
Max Breakdown Voltage1.2 kV
Max Collector Current10 A
Max Operating Temperature150 °C
Max Power Dissipation55 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation55 W
Rise Time170 ns
Schedule B8541290080
Turn-Off Delay Time12.1 µs
Turn-On Delay Time690 ns
Voltage Rating (DC)1.2 kV
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm