공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-05-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-06-22
LTD Date2018-12-22
관련 부품
STMicroelectronicsSTB4NK60Z-1
N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in I2PAK
onsemiFQI5N50CTU
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 STMicroelectronics STFI4N62K3에 대한 설명입니다.
N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in I2PAKFP package
25W(Tc) 30V 4.5V@ 50¦ÌA 22nC@ 10 V 1N 620V 2¦¸@ 1.9A,10V 3.8A 550pF@50V I2PAKFP 10.85mm
Trans MOSFET N-CH 620V 3.8A 3-Pin(3+Tab) I2PAKFP Tube
MOSFET N CH 620V 3.8A I2PAKFP
Power Field-Effect Transistor
I2PAKFP MOSFETs ROHS
Ptd High Voltage
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)3.8 A
Drain to Source Breakdown Voltage620 V
Drain to Source Resistance1.7 Ω
Drain to Source Voltage (Vdss)620 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance550 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Operating Temperature-55 °C
Rds On Max2 Ω
Rise Time9 ns
Turn-Off Delay Time29 ns
Turn-On Delay Time10 ns