공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-07-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-03-06
LTD Date2009-09-13
관련 부품
onsemiFQI5N50CTU
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
STMicroelectronicsSTB4NK60Z-1
N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in I2PAK
STMicroelectronicsSTFI6N62K3
N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in I2PAKFP package
설명
유통업체에서 제공한 STMicroelectronics STB5NK52ZD-1에 대한 설명입니다.
Power MOSFET Transistors N Ch 520V 1.22 Ohm 4.4A
4.4 A 520 V 1.5 ohm N-CHANNEL Si POWER MOSFET TO-262AA
MOSFET N-CH 520V 4.4A I2PAK
Power Field-Effect Transistor, 4.4A I(D), 520V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4.4 A
Drain to Source Breakdown Voltage520 V
Drain to Source Resistance1.5 Ω
Drain to Source Voltage (Vdss)520 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance529 pF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage520 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation70 W
Rds On Max1.5 Ω
Rise Time13.6 ns
Turn-Off Delay Time23.1 ns