공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-01-20
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTF45N65M5
N-channel 650 V, 0.067 Ohm typ., 35 A MDmesh M5 Power MOSFET in TO-220FP package
STMicroelectronicsSTF57N65M5
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STMicroelectronicsSTF35N65M5
N-channel 650 V, 0.085 Ohm, 27 A, MDmesh(TM) V Power MOSFET in TO-220FP
InfineonIPA65R099C6XKSA1
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설명
유통업체에서 제공한 STMicroelectronics STF42N65M5에 대한 설명입니다.
N-channel 650 V, 0.070 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-220FP package
STF42N65M5 N-channel MOSFET Transistor, 33 A, 650 V, 3-Pin TO-220FP
N-Channel 650 V 79 mOhm 40 W MDmesh V Power Mosfet - TO-220FP
Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-220FP Tube
N-CHANNEL 650 V, 0.0070 OHM, 33 A MDMESH V POWER MOSFET IN TO-220FP Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 650V, 33A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.07ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Pow
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)33 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance79 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance4.65 nF
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation40 W
Rds On Max79 mΩ
Resistance79 MΩ
Rise Time24 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time65 ns
Turn-On Delay Time61 ns
Dimensions
Height9.3 mm
Length10.4 mm
Width4.6 mm