가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 497-14192-5-ND | 922 | 1 | Tube | ||||||||
| RS (Formerly Allied Electronics) | STF28NM60ND | 0 | 1 | Bulk | 9h | |||||||
| Avnet | STF28NM60ND | 0 | 1K | 19h | ||||||||
| Mouser | 511-STF28NM60ND | 834 | 1 | Tube | ||||||||
| Microchip USA | STF28NM60ND | 123 | 300 | Tube | 10h |
관련 부품
STMicroelectronicsSTF33N60M2
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-220FP package
STMicroelectronicsSTP33N60M2
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-220 package
STMicroelectronicsSTP28NM60ND
STP28NM60ND N-channel MOSFET Transistor, 23 A, 600 V, 3-Pin TO-220
InfineonIPA60R125CPXKSA1
IPA60R125CP Series 650 V 25 A 0.125 Ohm CoolMos Power Transistor - TO-220-3
VishaySIHF30N60E-GE3
E Series N Channel 600 V 0.125 O 130 nC Flange Mount Power Mosfet - TO-220FP
VishaySIHF28N60EF-GE3
39W(Tc) 30V 4V@ 250¦ÌA 120nC@ 10 V 1N 600V 123m¦¸@ 14A,10V 28A 2.714nF@100V TO-220 16.12mm
설명
유통업체에서 제공한 STMicroelectronics STF28NM60ND에 대한 설명입니다.
STF28NM60ND N-CHANNEL MOSFET TRANSISTOR, 23 A, 650 V, 3-PIN TO-220FP
N-channel 600 V, 0.120 Ohm typ., 24 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package
Low input capacitance and gate charge | MOSFET N-CH 600V 23A TO220FP
Power Field-Effect Transistor, 23A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight329.988449 mg
Technical
Continuous Drain Current (ID)23 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance150 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time27 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.09 nF
Max Operating Temperature150 °C
Max Power Dissipation35 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max150 mΩ
Rise Time21.5 ns
Schedule B8541290080
Turn-Off Delay Time92 ns
Turn-On Delay Time23.5 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm