관련 부품
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설명
유통업체에서 제공한 STMicroelectronics STF13NK50Z에 대한 설명입니다.
N-channel 500 V, 0.4 Ohm, 11 A Zener-protected SuperMESH(TM) Power MOSFET in TO-220FP package
STF13NK50Z N-channel MOSFET Transistor, 11 A, 500 V, 3-Pin TO-220FP
Power MOSFET, N Channel, 500 V, 11 A, 480 mOhm, TO-220FP, 3 Pins, Through Hole
30W(Tc) 30V 4.5V@ 100¦ÌA 47nC@ 10 V 1N 500V 480m¦¸@ 6.5A,10V 11A 1.6nF@25V TO-220FP 20mm
500V 11A 30W 480m´Î@10V6.5A 4.5V@100Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
MOSFET, N CH, 500V, 11A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:11A; Package / Case:TO-220FP; Power Dissipation Pd:30W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
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- STM
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- SGS THOMSON
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- SGST
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- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance480 mΩ
Drain to Source Voltage (Vdss)500 V
Dual Supply Voltage500 V
Element ConfigurationSingle
Fall Time24 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.6 nF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs3.75 V
Number of Elements1
Power Dissipation30 W
Rds On Max480 mΩ
Rise Time23 ns
TerminationThrough Hole
Turn-Off Delay Time61 ns
Turn-On Delay Time18 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm