공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTF19NM50N
N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220FP
STMicroelectronicsSTP14NK50ZFP
N-Channel 500 V 380 mOhm Flange Mount SuperMESH Power Mosfet - TO-220FP
STMicroelectronicsSTP17NK40ZFP
N-CHANNEL 400V - 0.23 Ohm - 15A TO-220FP Zener-Protected SuperMESH(TM) Power MOSFET
VishaySIHP15N50E-GE3
E-Series N-Channel 500 V 156 W 0.243 O 66 nC Flange Mount Power Mosfet -TO-220AB
설명
유통업체에서 제공한 STMicroelectronics STP12NM50FP에 대한 설명입니다.
STP12NM50FP N-channel MOSFET Transistor, 12 A, 500 V, 3-Pin TO-220FP
Power MOSFET, N Channel, 500 V, 12 A, 0.3 ohm, TO-220FP, Through Hole
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220FP Tube
N-Channel 500V - 0.30 Ohm - 12A - TO-220FP MDmesh(TM) POWER MOSFET
Ciiva
35W(Tc) 30V 5V@ 50¦ÌA 39nC@ 10 V 1N 500V 350m¦¸@ 6A,10V 12A 1nF@25V TO-220FP 20mm
Power Field-Effect Transistor, 12A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Channel Type:N Channel; Drain Source Voltage Vds:550V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:35W; No. of Pins:3Pins; MSL:-RoHS Compliant: Yes
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Current Rating12 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance350 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)30 V
Input Capacitance1 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation35 W
Min Breakdown Voltage500 V
Min Operating Temperature-65 °C
Number of Channels1
Number of Elements1
Power Dissipation35 W
Rds On Max350 mΩ
Resistance350 mΩ
Rise Time10 ns
Threshold Voltage4 V
Turn-On Delay Time20 ns
Voltage Rating (DC)500 V
Dimensions
Height20 mm
Length10.4 mm
Width4.6 mm