가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 497-12246-ND | 378 | 1 | Tube | ||||||||
| Avnet | STF10NM60ND | 0 | 1K | 1d | ||||||||
| Farnell | STF10NM60ND | 0 | 5 | 12h | ||||||||
| Mouser | 511-STF10NM60ND | 946 | 1 | Tube | ||||||||
| Microchip USA | STF10NM60ND | 201 | 600 | Tube | 2d |
대체 부품
Price @ 1000
$ 1.141
$ 1.49
Stock
153,087
1,448,201
Authorized Distributors
4
6
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220-3
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
8 A
8 A
Threshold Voltage
4 V
3 V
Rds On Max
550 mΩ
550 mΩ
Gate to Source Voltage (Vgs)
25 V
25 V
Power Dissipation
25 W
25 W
Input Capacitance
540 pF
540 pF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-02-11
Lifecycle StatusObsolete (Last Updated: 1 month ago)
관련 부품
STMicroelectronicsSTF11NM50N
N-channel 500 V, 0.40 Ohm typ., 8.5 A MDmesh II Power MOSFET in a TO-220FP package
STMicroelectronicsSTF11NM60ND
N-channel 600 V, 0.37 Ohm typ., 10 A FDmesh II Power MOSFET in TO-220FP package
InfineonIPAW60R600CEXKSA1
Compliant Through Hole No SVHC 600 mΩ TO-220-3 3 Production (Last Updated: 2 years ago) 450
설명
유통업체에서 제공한 STMicroelectronics STF10NM60ND에 대한 설명입니다.
N-channel 600 V, 0.57 Ohm, 8 A, TO-220FP FDmesh(TM) II Power MOSFET
Trans MOSFET N-CH 600V 8A 3-Pin(3+Tab) TO-220FP Tube
25W(Tc) 25V 4V@ 250¦ÌA 19nC@ 10 V 1N 600V 550m¦¸@ 4A,10V 8A 540pF@50V TO-220FP 16.4mm
Power Field-Effect Transistor, 8A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 8A, TO 220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.57ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:25W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
제조업체 별칭
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- ST MICRO
- STM
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- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time9.8 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance540 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation25 W
Rds On Max550 mΩ
Resistance550 MΩ
Rise Time10 ns
Threshold Voltage4 V
Turn-Off Delay Time32 ns
Turn-On Delay Time9.2 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm