관련 부품
InfineonIPD50R650CEAUMA1
Mosfet Transistor, N Channel, 6.1 A, 500 V, 0.59 Ohm, 13 V, 3 V Rohs Compliant: Yes
설명
유통업체에서 제공한 STMicroelectronics STD9NM40N에 대한 설명입니다.
N-channel 400 V, 0.73 Ohm typ., 5.6 A MDmesh(TM) II Power MOSFET in a DPAK package
Trans MOSFET N-CH 400V 5.6A 3-Pin(2+Tab) DPAK T/R
60W(Tc) 25V 4V@ 250¦ÌA 14nC@ 10 V 1N 400V 790m¦¸@ 2.5A,10V 5.6A 365pF@50V TO-252
Hv Mosfet Mdmesh |Stmicroelectronics STD9NM40N
MOSFET N-Ch 400V 0.73Ohm 5.6A pwr Mdmesh II
Power Field-Effect Transistor, 5.6A I(D), 400V, 0.79ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Power MOSFETs, 400V, 5.6A, DPAK, Tape and Reel
STMicroelectronics SCT
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)5.6 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance790 mΩ
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time8.8 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance365 pF
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation60 W
Rds On Max790 mΩ
Rise Time4.4 ns
Schedule B8541290080
Turn-Off Delay Time25 ns