대체 부품
Price @ 1000
$ 0.349
Stock
27,043
167,473
Authorized Distributors
0
4
Mount
Surface Mount
Surface Mount
Case/Package
TO-252-3
DPAK
Drain to Source Voltage (Vdss)
500 V
500 V
Continuous Drain Current (ID)
5 A
5 A
Threshold Voltage
-
-
Rds On Max
800 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
-
40 W
Input Capacitance
280 pF
-
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-01-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-08-31
LTD Date2019-02-28
관련 부품
InfineonSPD04P10PGBTMA1
MOSFET, P-CH, 100V, 4A, TO-252; Available until stocks are exhausted Alternative available
설명
유통업체에서 제공한 Infineon IPD50R800CEATMA1에 대한 설명입니다.
Trans MOSFET N-CH 500(Min)V 5A 3-Pin TO-252 T/R
Compliant Surface Mount 15.9 ns Tape & Reel (TR) 5.5 ns 800 mΩ TO-252-3 3
Power Field-Effect Transistor, 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
COOLMOS N-CHANNEL POWER MOSFET
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)5 A
Drain to Source Resistance800 mΩ
Drain to Source Voltage (Vdss)500 V
Fall Time15.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance280 pF
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Rds On Max800 mΩ
Rise Time5.5 ns
Turn-Off Delay Time26 ns
Turn-On Delay Time6.2 ns