관련 부품
STMicroelectronicsSTD7LN80K5
N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSFET in a DPAK package
설명
유통업체에서 제공한 STMicroelectronics STD6N80K5에 대한 설명입니다.
N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in DPAK package
Power MOSFET, N Channel, 800 V, 4.5 A, 1.3 ohm, TO-252 (DPAK), Surface Mount
85W(Tc) 30V 5V@ 100¦ÌA 7.5nC@ 10 V 1N 800V 1.6¦¸@ 2A,10V 4.5A 255pF@100V DPAK,TO-252-3
Trans MOSFET N-CH 800V 4.5A 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 800V, 0.0016ohm, N-Channel
Zener-protected | MOSFET N-CH 800V 4.5A DPAK
STD6N80K5 MOS-FET Enh N 800 V 4.5 A
Mosfet, N-Ch, 800V, 4.5A, To-252; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:4.5A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STD6N80K5
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- STM
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- INMOS
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- ST MICROELECTRONIC
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- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)4.5 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance1.6 mΩ
Drain to Source Voltage (Vdss)800 V
Gate to Source Voltage (Vgs)30 V
Input Capacitance255 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation85 W
Manufacturer Package IdentifierDPAK-0068772_type-E
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation85 W
Rds On Max1.6 Ω
Threshold Voltage3 V
Turn-Off Delay Time28.5 ns
Turn-On Delay Time16 ns
Dimensions
Height2.52 mm