onsemi FCD1300N80Z

N-channel Power Mosfet, Superfet® II, 800 V, 4 A, 1.3 Ω, Dpak
$ 1.19
Production
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가격 및 재고

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DistributorSKUMinPkg
Rochester ElectronicsFCD1300N80Z215
15h
DigiKey
2
FCD1300N80ZCT-ND1,8911Cut Tape
Newark
2
FCD1300N80Z01Cut Tape
Onlinecomponents.comFCD1300N80Z0625Bulk
AvnetFCD1300N80Z02500
17h

데이터시트 및 문서

onsemi FCD1300N80Z에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

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Technical Drawing1 페이지3년 전

Master Electronics

IHS

onsemi

Fairchild Semiconductor

재고 내역

3개월간의 트렌드:
-39.19%
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공급망

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-07-02
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Trans MOSFET N-CH 700V 3.9A 3-Pin TO-252 T/R
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STMicroelectronicsSTD7LN80K5
N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSFET in a DPAK package
세부 사항
STMicroelectronicsSTD7NM64N
N-channel 640 V, 5 A, 0.88 Ohm typ. MDmesh(TM) II Power MOSFET in a DPAK package
세부 사항

설명

유통업체에서 제공한 onsemi FCD1300N80Z에 대한 설명입니다.

N-Channel Power MOSFET, SUPERFET® II, 800 V, 4 A, 1.3 Ω, DPAK
onsemi
Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Semicontronic
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
Fairchild Semiconductor

이미지

element14 APAC
Future Electronics

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