Infineon IRFU4615PBF

Single N-Channel 150 V 42 mOhm 26 nC HEXFET® Power Mosfet - IPAK

150V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

Trans MOSFET N-CH 150V 33A 3-Pin(3+Tab) IPAK Bulk/Tube

HEXFET POWER MOSFET Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

MOSFET, N-CH 150V 33A IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:144W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:33mA; Package / Case:IPAK; Power Dissipation Pd:144W; Power Dissipation Pd:144W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V