공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-03-24
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2016-12-01
LTD Date2017-06-01
관련 부품
InfineonIPD048N06L3GBTMA1
115W 20V 37nC@ 4.5V 1N 60V 4.8m¦¸@ 10V 6.3nF@ 30V TO-252-3 , 6.5mm*6.22mm*2.3mm
InfineonIRFR7540TRLPBF
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Diodes Inc.DMTH6005LK3-13
Mosfet, N-Ch, 60V, 90A, To-252 Rohs Compliant: Yes |Diodes Inc. DMTH6005LK3-13
InfineonIPD100N06S403ATMA2
Power MOSFET, N Channel, 60 V, 100 A, 0.0035 ohm, TO-252 (DPAK), Surface Mount
Diodes Inc.DMTH6010LK3-13
MOSFET N-CH 60V 14.8A/70A TO252 / N-Channel 60 V 14.8A (Ta), 70A (Tc) 3.1W (Ta) Surface Mount TO-252-3
설명
유통업체에서 제공한 Infineon IPD90N06S405ATMA2에 대한 설명입니다.
Mosfet, N-Ch, 60V, 90A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD90N06S405ATMA2
60V, N-Ch, 5.1 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS
Infineon SCT
Trans MOSFET N-CH 60V 90A Automotive 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 90A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested; Ultra low RDSon | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
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- Infineon Technologies
- INF
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- IR/INFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)90 A
Drain to Source Resistance5.1 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.5 nF
Max Dual Supply Voltage60 V
Max Operating Temperature175 °C
Max Power Dissipation107 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance5.1 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation107 W
Rds On Max5.1 mΩ
Rise Time5 ns
Schedule B8541290080
Turn-Off Delay Time35 ns
Turn-On Delay Time20 ns