공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonIPD050N03LGATMA1
Power MOSFET, N Channel, 30 V, 50 A, 0.0042 ohm, TO-252 (DPAK), Surface Mount
onsemiNTD4858NAT4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 11.2A Ta 73A Tc 13.6A 2W 25V
설명
유통업체에서 제공한 STMicroelectronics STD100NH02LT4에 대한 설명입니다.
100W(Tc) 20V 1.8V@ 250¦ÌA 84nC@ 10 V 1N 24V 4.8m¦¸@ 30A,10V 60A 3.94nF@15V TO-252 2.4mm
Power MOSFET Transistors N-Ch 24 Volt 60 Amp
MOSFET N-CH 24V 60A DPAK
Power Field-Effect Transistor, 60A I(D), 24V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IC OPAMP GP 6.4MHZ RRO 8SOIC
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)60 A
Current Rating60 A
Drain to Source Breakdown Voltage24 V
Drain to Source Resistance4.8 mΩ
Drain to Source Voltage (Vdss)24 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.94 nF
Max Operating Temperature175 °C
Max Power Dissipation100 W
Min Breakdown Voltage24 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation100 W
Rds On Max4.8 mΩ
Resistance4.8 mΩ
Rise Time200 ns
Turn-Off Delay Time60 ns
Voltage Rating (DC)24 V