관련 부품
STMicroelectronicsSTB4NK60ZT4
N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in D2PAK
STMicroelectronicsSTB5NK50ZT4
Mosfet Transistor, N Channel, 4.4 A, 500 V, 1.22 Ohm, 10 V, 3.75 V Rohs Compliant: Yes
설명
유통업체에서 제공한 STMicroelectronics STB6N60M2에 대한 설명입니다.
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in D2PAK package
STB6N60M2 N-CHANNEL MOSFET TRANSISTOR, 4.5 A, 650 V, 3-PIN D2PAK
Mosfet, N-Ch, 600V, 4.5A, 150Deg C, 60W Rohs Compliant: Yes |Stmicroelectronics STB6N60M2
Trans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 4.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)4.5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time22.5 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance232 pF
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape (CT)
Power Dissipation60 W
Rds On Max1.2 Ω
Resistance1.2 Ω
Rise Time7.4 ns
Schedule B8541290080
Turn-Off Delay Time24 ns
Turn-On Delay Time9.5 ns
Dimensions
Height9.35 mm
Length10.4 mm
Width4.6 mm